SONOS technology for commercial and military nonvolatile memory applicationsĪdams, D. Comparisons were made between the model predictions and experimental device data. The SONOS floating gate charge and voltage, tunneling current, threshold voltage, and drain current were characterized during an erase cycle. The SONOS memory cell erase cycle was investigated using a nonquasi-static (NQS) MOSFET model.
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They utilize low programming voltages, endure extended erase/write cycles, are inherently resistant to radiation, and are compatible with high-density scaled CMOS for low power, portable electronics. These memories are electrically erasable programmable read-only memories (EEPROMs). Silicon-oxide-nitride-oxide-silicon ( SONOS) nonvolatile semiconductor memories (NVSMS) have many advantages. Modeling of Sonos Memory Cell Erase Cycle The tunnel current, drain current, threshold voltage and read drain current all closely agreed with empirical data. The characterization of the SONOS memory cell predicted by the model closely agrees with experimental data obtained from actual SONOS memory cells. This includes floating gate charge and voltage characteristics as well as tunneling current, voltage threshold and drain current characterization. This paper characterizes the SONOS write operation using a nonquasi-static MOSFET model. Silicon-oxide-nitride-oxide-silicon ( SONOS) nonvolatile memory is gaining favor over conventional EEPROM FLASH memory technology. SONOS Nonvolatile Memory Cell Programming Characteristics
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